- Rds On - Drain-Source Resistance :
-
- 1 MOhms (4)
- 1.1 mOhms (2)
- 1.2 mOhms (9)
- 1.25 mOhms (2)
- 1.3 mOhms (5)
- 1.4 mOhms (2)
- 1.5 mOhms (6)
- 1.6 mOhms (2)
- 1.7 mOhms (5)
- 1.8 mOhms (3)
- 2 mOhms (3)
- 2.1 mOhms (6)
- 2.2 mOhms (4)
- 2.3 mOhms (4)
- 2.5 mOhms (8)
- 2.8 mOhms (4)
- 2.9 mOhms (4)
- 3.1 mOhms (1)
- 3.3 mOhms (2)
- 3.4 mOhms (2)
- 3.7 mOhms (2)
- 3.9 mOhms (3)
- 4 mOhms (2)
- 4.5 mOhms (1)
- 4.7 mOhms (3)
- 5.3 mOhms (1)
- 5.7 mOhms (1)
- 800 uOhms (2)
- 900 uOhms (7)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 104 nC (2)
- 122 nC (2)
- 131 nC (5)
- 133 nC (2)
- 150 nC (4)
- 168 nC (2)
- 175 nC (2)
- 19 nC (1)
- 20 nC (2)
- 23 nC (3)
- 27 nC (1)
- 32 nC (2)
- 35 nC (2)
- 41 nC (3)
- 43 nC (1)
- 44 nC (2)
- 45 nC (2)
- 46 nC (1)
- 48 nC (2)
- 49 nC (2)
- 52 nC (7)
- 52.7 nC (2)
- 55 nC (2)
- 56 nC (2)
- 57 nC (2)
- 60 nC (1)
- 61 nC (3)
- 63 nC (2)
- 63.4 nC (2)
- 64 nC (2)
- 69 nC (4)
- 70 nC (1)
- 72 nC (2)
- 73 nC (2)
- 74 nC (3)
- 77 nC (2)
- 78 nC (2)
- 85 nC (6)
- 90 nC (1)
- 93 nC (3)
- 95 nC (2)
- 96 nC (2)
100 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
10,410
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 3.9 mOhms | 2.2 V | 74 nC | Enhancement | |||||
|
33,436
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 800 uOhms | 1.2 V | 85 nC | Enhancement | OptiMOS | ||||
|
26,157
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 1.2 mOhms | 2.1 V | 104 nC | Enhancement | |||||
|
20,446
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 900 uOhms | 1.2 V | 96 nC | Enhancement | OptiMOS | ||||
|
18,180
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 4.7 mOhms | 2 V | 56 nC | Enhancement | OptiMOS | ||||
|
15,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.7 mOhms | 1 V | 93 nC | Enhancement | OptiMOS | ||||
|
GET PRICE |
25,074
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.3 mOhms | 1.2 V | 85 nC | Enhancement | OptiMOS | |||
|
9,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1 MOhms | 1.2 V | 133 nC | Enhancement | |||||
|
10,490
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1 MOhms | 1.2 V | 133 nC | Enhancement | OptiMOS | ||||
|
8,323
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.4 mOhms | 2.2 V | 72 nC | Enhancement | |||||
|
12,024
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.3 mOhms | 1.2 V | 175 nC | Enhancement | OptiMOS | ||||
|
9,027
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.1 mOhms | Enhancement | OptiMOS | ||||||
|
10,906
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 900 uOhms | 1.2 V | 78 nC | Enhancement | OptiMOS | ||||
|
5,527
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4 mOhms | 2 V | 63 nC | Enhancement | |||||
|
5,731
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 2.9 mOhms | 2.3 V | 63.4 nC | Enhancement | |||||
|
6,105
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.5 mOhms | 1 V | 55 nC | Enhancement | OptiMOS | ||||
|
3,543
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.1 mOhms | 1.2 V | 85 nC | Enhancement | |||||
|
2,086
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 3.9 mOhms | 2 V | 69 nC | Enhancement | OptiMOS | ||||
|
4,574
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 3.7 mOhms | 2.3 V | 69 nC | Enhancement | OptiMOS | ||||
|
3,733
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 900 uOhms | 1.2 V | 122 nC | Enhancement | |||||
|
13,530
In-stock
|
Infineon Technologies | MOSFET 100VPower transistor OptiMOS 5 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4.7 mOhms | 2.2 V | 70 nC | Enhancement | |||||
|
19,130
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.3 mOhms | 1.2 V | 175 nC | Enhancement | OptiMOS | ||||
|
4,345
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 100A | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 4.5 mOhms | 2.2 V | 61 nC | Enhancement | |||||
|
4,898
In-stock
|
Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.8 mOhms | 2.1 V | 41 nC | Enhancement | |||||
|
9,379
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.2 mOhms | 1.2 V | 52 nC | Enhancement | |||||
|
14,101
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.9 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | ||||
|
GET PRICE |
6,539
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.2 mOhms | 1.2 V | 77 nC | Enhancement | ||||
|
GET PRICE |
12,221
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 5.7 mOhms | 2.2 V | 43 nC | Enhancement | ||||
|
4,507
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.3 mOhms | 1.2 V | 150 nC | Enhancement | OptiMOS | ||||
|
2,212
In-stock
|
Infineon Technologies | MOSFET LV POWER MOS | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.25 mOhms | 1.2 V | 20 nC | Enhancement |