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Vgs - Gate-Source Voltage :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFK100N65X2
1+
$12.600
10+
$11.590
25+
$11.110
100+
$9.780
RFQ
397
In-stock
IXYS MOSFET MOSFET 650V/100A Ultra Junction X2 30 V Through Hole TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 100 A 30 mOhms 2.7 V 180 nC Enhancement  
IXFX100N65X2
1+
$12.390
10+
$11.390
25+
$10.920
100+
$9.620
RFQ
84
In-stock
IXYS MOSFET MOSFET 650V/100A Ultra Junction X2 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 100 A 30 mOhms 2.7 V 180 nC Enhancement  
CSD19531Q5A
1+
$1.580
10+
$1.420
25+
$1.350
100+
$1.140
2500+
$0.671
RFQ
14,410
In-stock
Texas instruments MOSFET 100V 5.3mOhm Pwr MOSFET 20 V SMD/SMT VSONP-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 100 V 100 A 6 mOhms 2.7 V 37 nC Enhancement NexFET
CSD19502Q5B
GET PRICE
RFQ
124,300
In-stock
Texas instruments MOSFET N-CH 3.4mOhm 80V Power MOSFET 20 V SMD/SMT VSON-Clip-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 80 V 100 A 3.4 mOhms 2.7 V 48 nC   NexFET
CSD19531Q5AT
1+
$1.760
10+
$1.580
25+
$1.500
100+
$1.270
250+
$1.190
RFQ
431
In-stock
Texas instruments MOSFET 100V,5.3mOhm,NexFET Power MOSFET 20 V SMD/SMT VSONP-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 100 V 100 A 6 mOhms 2.7 V 37 nC Enhancement NexFET
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