- Manufacture :
- Package / Case :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,934
In-stock
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Texas instruments | MOSFET 40-V N-Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.3 mOhms | 1.8 V | 52 nC | NexFET | |||||
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3,273
In-stock
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Texas instruments | MOSFET DualCool N-Channel NexFET Power MOSFET | 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 3.3 mOhms | 1.6 V | 13.3 nC | NexFET | |||||
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502
In-stock
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Texas instruments | MOSFET 40-V, N-Channel NexFET? Power MOSFET 8-VSON-CLI... | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.3 mOhms | 1.5 V | 52 nC | Enhancement | NexFET | ||||
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14,860
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.3 mOhms | 2.1 V | 32 nC | Enhancement | |||||
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10,000
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.3 mOhms | 2.1 V | 32 nC | Enhancement | OptiMOS | ||||
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VIEW | Toshiba | MOSFET U-MOSVIII-H 80V 100A 59nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 3.3 mOhms | 2 V to 4 V | 59 nC | UMOSVIII |