- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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18,180
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 4.7 mOhms | 2 V | 56 nC | Enhancement | OptiMOS | |||
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5,527
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4 mOhms | 2 V | 63 nC | Enhancement | ||||
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2,086
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 3.9 mOhms | 2 V | 69 nC | Enhancement | OptiMOS | |||
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4,658
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 4.1mOhms 67nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 4.1 mOhms | 2 V | 69 nC | |||||
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11,035
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.5 mOhms | 2 V | 61 nC | Enhancement | OptiMOS | |||
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5,088
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 4.7 mOhms | 2 V | 56 nC | Enhancement | OptiMOS | |||
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4,813
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 3.9 mOhms | 2 V | 69 nC | Enhancement | OptiMOS | |||
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5,235
In-stock
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Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 15 mOhms | 2 V | 2.9 nC | Enhancement | NexFET | |||
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2,886
In-stock
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Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 9.5 mOhms | 2 V | 4 nC | Enhancement | NexFET | |||
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796
In-stock
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Texas instruments | MOSFET 60V NCh NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.7 mOhms | 2 V | 15 nC | Enhancement | NexFET | |||
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12
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 200 V | 100 A | 22 mOhms | 2 V | 435 nC | Enhancement | |||||
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6,000
In-stock
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Siliconix / Vishay | MOSFET N-Channel 80V PowerPAK SO-8 | +/- 20 V | SMD/SMT | PowerPAK-SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 0.0024 Ohms | 2 V | 105 nC | Enhancement | ||||
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6,000
In-stock
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Siliconix / Vishay | MOSFET N-Channel 60V PowerPAK SO-8 | +/- 20 V | SMD/SMT | PowerPAK-SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 0.0014 Ohms | 2 V | 102 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4 mOhms | 2 V | 63 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.5 mOhms | 2 V | 61 nC | Enhancement |
