- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Packaging :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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32 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Fall Time | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
8,530
In-stock
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Infineon Technologies | MOSFET TRENCH >=100V | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 214 W | N-Channel | 200 V | 52 A | 22 mOhms | 2 V | 43 nC | Enhancement | 10 ns | TSON-8 | 5000 | Green available | |||||||||
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7,061
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | DualCool-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 52 A | 15 mOhms | 4 V | 33 nC | PowerTrench | ||||||||||
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154,200
In-stock
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Fairchild Semiconductor | MOSFET 200V N-CHANNEL MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 52 A | 49 mOhms | Enhancement | ||||||||||||
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2,460
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 52 A | 12 mOhms | Enhancement | PowerTrench | |||||||||||
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373
In-stock
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Fairchild Semiconductor | MOSFET 600V, 52A, 72mOhm N-Channel Mosfet | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 65 mOhms | 165 nC | Enhancement | SuperFET II FRFET | ||||||||||
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600
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 600V slow version | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 70 mOhms | 2.5 V | 128 nC | Enhancement | SuperFET II | |||||||||
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384
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 195 mOhms | 3 V | 160 nC | Enhancement | SuperFET II | |||||||||
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423
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 52 A | 120 mOhms | Polar2 HiPerFET | ||||||||||||
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598
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-4 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 45 mOhms | 2 V | 91 nC | Enhancement | |||||||||||
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1,432
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 52 A | 21 mOhms | Enhancement | QFET | |||||||||||
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160
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 600V Fast ver | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 72 mOhms | 3.5 V | 95 nC | SuperFET II | ||||||||||
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3,275
In-stock
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onsemi | MOSFET NFET SO8FL 30V 52A 5.8MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 52 A | 5.8 mOhms | 2.1 V | 18.2 nC | |||||||||||
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3,220
In-stock
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onsemi | MOSFET Pwr MOSFET 30V 52A 5.9mOhm SGL N-CH | WDFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 52 A | 5.9 mOhms | |||||||||||||||||
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72
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 45 mOhms | 2 V | 91 nC | Enhancement | |||||||||||
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86
In-stock
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IXYS | MOSFET 52 Amps 300V 0.066 Ohm Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 52 A | 66 mOhms | Enhancement | ||||||||||||
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49
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 52 A | 120 mOhms | Polar2 HiPerFET | ||||||||||||
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2,371
In-stock
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onsemi | MOSFET NFET SO8FL 30V 52A 5.8MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 52 A | 4.6 mOhms | 1.3 V | 22.2 nC | Enhancement | ||||||||||
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1,500
In-stock
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onsemi | MOSFET NFET SO8FL 30V 52A 5.8MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 52 A | 4.6 mOhms | 1.3 V | 22.2 nC | Enhancement | ||||||||||
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30
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 52 A | 120 mOhms | Polar2 HiPerFET | ||||||||||||
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29
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 52 A | 68 mOhms | 3 V | 113 nC | Enhancement | ||||||||||
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194
In-stock
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Toshiba | MOSFET N-Ch PWR FET 52A 72W 100V VDSS | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 52 A | 13.8 mOhms | |||||||||||||||
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38
In-stock
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IXYS | MOSFET 300V 52A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 52 A | 60 mOhms | Enhancement | HyperFET | |||||||||||
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29,600
In-stock
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Infineon Technologies | MOSFET N-Ch 560V 52A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 52 A | 70 mOhms | Enhancement | CoolMOS | |||||||||||
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31,770
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Ch MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 52 A | 49 mOhms | Enhancement | ||||||||||||
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59
In-stock
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IXYS | MOSFET 52 Amps 300V 0.066 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 52 A | 73 mOhms | 5 V | 110 nC | Enhancement | Polar, HiPerFET | |||||||||
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VIEW | IXYS | MOSFET 52 Amps 600V 0.12 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 115 mOhms | Enhancement | HyperFET | |||||||||||
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VIEW | IXYS | MOSFET 52 Amps 600V 0.12 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 115 mOhms | Enhancement | HyperFET | |||||||||||
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VIEW | IXYS | MOSFET 300V 52A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 52 A | 60 mOhms | Enhancement | HyperFET | |||||||||||
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VIEW | IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 52 A | 160 mOhms | 3.5 V to 6.5 V | 308 nC | Enhancement | HyperFET | |||||||||
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VIEW | IXYS | MOSFET 52 Amps 300V 0.066 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 52 A | 66 mOhms | Enhancement |