- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
270
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 30 A | 95 mOhms | 4 V | 71 nC | Enhancement | |||
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GET PRICE |
766
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 30A 75mOhm 82nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 30 A | 75 mOhms | 4 V | 82 nC | Enhancement | |||
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GET PRICE |
76,000
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 30A 24.5mOhm 18nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 24.5 mOhms | 4 V | 27 nC | ||||||
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113
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 500 V | 30 A | 170 mOhms | 4 V | 115 nC | Enhancement | POWER MOS 8 | |||
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GET PRICE |
7
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1000 V | 30 A | 440 mOhms | 4 V | 260 nC | Enhancement |
