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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Packaging Pd - Power Dissipation Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Fall Time Package Factory Pack Quantity RoHS
STB36N60M6
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RFQ
46,000
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STMicroelectronics MOSFET N-channel 600 V, 85 mOhm typ 30 A MDmesh M6 Power MOSFE... - 25 V, + 25 V Tape & Reel (TR) 208 W N-Channel 600 V 30 A 85 mOhms 3.25 V 44.3 nC 7.3 ns D2PAK-3 1000 Green available
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