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- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 30 A | 370 mOhms | 2.5 V | 260 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 30 Amps 1000V 0.35 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 30 A | 400 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 34 Amps 1000V 0.28W Rds | 20 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 30 A | 300 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 30 Amps 500V 0.16 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 160 mOhms | Enhancement |
