- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
-
- 1.6 mOhms (2)
- 1.7 mOhms (1)
- 11.5 mOhms (1)
- 14.4 mOhms (1)
- 15 mOhms (2)
- 18 mOhms (1)
- 2.1 mOhms (1)
- 2.2 mOhms (1)
- 2.3 mOhms (1)
- 2.6 mOhms (1)
- 3.3 mOhms (2)
- 3.5 mOhms (2)
- 4.2 mOhms (4)
- 4.4 mOhms (1)
- 4.8 mOhms (2)
- 5.4 mOhms (2)
- 6.7 mOhms (2)
- 7.3 mOhms (2)
- 7.5 mOhms (1)
- 74 mOhms (1)
- 8.3 mOhms (1)
- 9 mOhms (3)
- 9.4 mOhms (2)
- Tradename :
37 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,214
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Chan Dual Cool PowerTrench MOSFET | 20 V | SMD/SMT | DualCool-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 40 A | 2.2 mOhms | 2 V | 24 nC | PowerTrench | |||||
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7,312
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 1.6 mOhms | 1.2 V | 44 nC | Enhancement | OptiMOS | ||||
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6,383
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 2.6 mOhms | 26 nC | OptiMOS | ||||||
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6,017
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 7.3 mOhms | 1 V | 23 nC | Enhancement | OptiMOS | ||||
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12,597
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 5.4 mOhms | 1.2 V | 13 nC | Enhancement | OptiMOS | ||||
|
5,907
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 1.7 mOhms | 2.2 V | 23 nC | OptiMOS | |||||
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8,413
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 7.5 mOhms | 15 nC | OptiMOS | ||||||
|
6,500
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 7.3 mOhms | 1 V | 23 nC | Enhancement | OptiMOS | ||||
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8,251
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 6.7 mOhms | 1 V | 27 nC | Enhancement | OptiMOS | ||||
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5,110
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 3.5 mOhms | Enhancement | OptiMOS | ||||||
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4,858
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 2.3 mOhms | 1 V | 24 nC | Enhancement | OptiMOS | ||||
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5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 4.2 mOhms | 1 V | 40 nC | Enhancement | OptiMOS | ||||
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4,753
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 15 mOhms | Enhancement | PowerTrench | ||||||
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3,499
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 3.3 mOhms | 1.2 V | 23 nC | Enhancement | OptiMOS | ||||
|
3,830
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 4.8 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | ||||
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753
In-stock
|
Fairchild Semiconductor | MOSFET N-Ch PowerTrench Logic Level | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 40 A | 15 mOhms | Enhancement | PowerTrench | ||||||
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115
In-stock
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Infineon Technologies | MOSFET LV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 40 A | 4.4 mOhms | 1.6 V | 11 nC | Enhancement | ||||||
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1,401
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 4.2 mOhms | 1 V | 35 nC | Enhancement | OptiMOS | ||||
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9,900
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.5mOhms 41nC | 12 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 3.5 mOhms | 0.8 V | 41 nC | ||||||
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2,400
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A DPAK-2 OptiMOS-T2 | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 8.3 mOhms | OptiMOS | |||||||||||
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113
In-stock
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onsemi | MOSFET NFET U8FL 30V 40A 9.4MOHM | WDFN-8 | Reel | Si | N-Channel | 30 V | 40 A | 9.4 mOhms | |||||||||||||
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1,623
In-stock
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STMicroelectronics | MOSFET N-Ch 30 Volt 40 Amp | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 40 A | 18 mOhms | Enhancement | |||||||
|
10,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 2.1 mOhms | 2.2 V | 41 nC | OptiMOS | |||||
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12,000
In-stock
|
onsemi | MOSFET NFET U8FL 30V 40A 9.4MOHM | WDFN-8 | Reel | Si | N-Channel | 30 V | 40 A | 9.4 mOhms | |||||||||||||
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8,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 1.6 mOhms | 1.2 V | 44 nC | Enhancement | OptiMOS | ||||
|
VIEW | STMicroelectronics | MOSFET N-Ch 30 Volt 40 Amp | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 11.5 mOhms | Enhancement | |||||||
|
5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 4.2 mOhms | 1 V | 35 nC | Enhancement | OptiMOS | ||||
|
5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 6.7 mOhms | 1 V | 27 nC | Enhancement | OptiMOS | ||||
|
4,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 4.8 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | ||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 30V 40A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 9 mOhms | Enhancement | OptiMOS |