- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10,635
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.8 mOhms | 1.2 V to 2 V | 29 nC | OptiMOS | ||||
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GET PRICE |
43,220
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 3 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||
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4,000
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 5 mOhms | 1.2 V | 12 nC | Enhancement | OptiMOS | |||
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2,720
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 3 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | |||
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1,200
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 5 mOhms | 1.2 V | 12 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.5 mOhms | 1.2 V | 48 nC | Enhancement | OptiMOS |
