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Package / Case :
Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
BSZ042N06NS
1+
$1.530
10+
$1.310
100+
$1.000
500+
$0.884
5000+
$0.619
RFQ
14,975
In-stock
Infineon Technologies MOSFET N-Ch 60V 40A TDSON-8 20 V SMD/SMT TSDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 60 V 40 A 3.4 mOhms 2.1 V 32 nC Enhancement  
BSZ042N06NSATMA1
1+
$1.530
10+
$1.310
100+
$1.000
500+
$0.884
5000+
$0.619
RFQ
4,990
In-stock
Infineon Technologies MOSFET N-Ch 60V 40A TDSON-8 20 V SMD/SMT TSDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 60 V 40 A 3.4 mOhms 2.1 V 32 nC Enhancement OptiMOS
IRFHM4231TRPBF
1+
$0.880
10+
$0.759
100+
$0.583
500+
$0.515
4000+
$0.360
RFQ
764
In-stock
IR / Infineon MOSFET 25V Single N-Ch HEXFET PWR 50A 20 V SMD/SMT PQFN-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 25 V 40 A 3.4 mOhms 1.6 V 20 nC    
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