- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
4,692
In-stock
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Infineon Technologies | MOSFET TRENCH >=100V | - 20 V, + 20 V | Tray | 1 Channel | 83 W | 100 V | 40 A | 10.3 mOhms | 1.7 V | 12 nC | TDSON-8 | 5000 | Green available | ||||||||||
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22,670
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 40 A | 10.3 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 40 A | 10.3 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||||||
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20,000
In-stock
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Toshiba | MOSFET 40V N0Ch PWR FET 40A 47W 1920pF | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 10.3 mOhms | 2.3 V | 29 nC | Enhancement |
