- Manufacture :
- Vgs - Gate-Source Voltage :
- Packaging :
- Rds On - Drain-Source Resistance :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Forward Transconductance - Min | Rise Time | Fall Time | Package | Factory Pack Quantity | RoHS | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
7,650
In-stock
|
Infineon Technologies | MOSFET TRENCH <= 40V | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 83 W | N-Channel | 40 V | 40 A | 2.1 mOhms | 2.3 V | 31 nC | 110 S | 1.6 ns | 4 ns | TSDSON-FL-8 | 5000 | Green available | |||||||
|
|
20,000
In-stock
|
Toshiba | MOSFET 40V N0Ch PWR FET 40A 47W 1920pF | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 10.3 mOhms | 2.3 V | 29 nC | Enhancement |
