Build a global manufacturer and supplier trusted trading platform.
Package / Case :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
BSZ0506NSATMA1
1+
$0.880
10+
$0.730
100+
$0.471
1000+
$0.377
5000+
$0.318
RFQ
115
In-stock
Infineon Technologies MOSFET LV POWER MOS 20 V SMD/SMT TSDSON-8 - 55 C + 150 C Reel   Si N-Channel 30 V 40 A 4.4 mOhms 1.6 V 11 nC Enhancement  
IRFHM4231TRPBF
1+
$0.880
10+
$0.759
100+
$0.583
500+
$0.515
4000+
$0.360
RFQ
764
In-stock
IR / Infineon MOSFET 25V Single N-Ch HEXFET PWR 50A 20 V SMD/SMT PQFN-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 25 V 40 A 3.4 mOhms 1.6 V 20 nC    
IRFH4213DTRPBF
1+
$1.720
10+
$1.460
100+
$1.170
500+
$1.020
4000+
$0.761
RFQ
70
In-stock
Infineon Technologies MOSFET 25V Single N-Ch HEXFET PWR 50A 20 V SMD/SMT PQFN-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 25 V 40 A 1.5 mOhms 1.6 V 55 nC   FastIRFet
Page 1 / 1