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- 55 nC (1)
- 64 nC (2)
- Channel Mode :
85 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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22,670
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 40 A | 10.3 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | ||||
|
10,635
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.8 mOhms | 1.2 V to 2 V | 29 nC | OptiMOS | |||||
|
18,212
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 3.3 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | ||||
|
10,702
In-stock
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onsemi | MOSFET Single N-CH 60V 40A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 13 mOhms | 1 V to 2 V | 29 nC | ||||||
|
3,755
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 20 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||||
|
11,388
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 14 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | ||||
|
2,214
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Chan Dual Cool PowerTrench MOSFET | 20 V | SMD/SMT | DualCool-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 40 A | 2.2 mOhms | 2 V | 24 nC | PowerTrench | |||||
|
1,797
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Chan DualCool PowerTrench MOSFET | 20 V | SMD/SMT | DualCool-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 40 A | 6.3 mOhms | 3.7 V | 29 nC | Depletion | PowerTrench | ||||
|
1,819
In-stock
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Fairchild Semiconductor | MOSFET PT7 80/20V Dual Nch PowerTrench MOSFET | 20 V | SMD/SMT | PQFN-12 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 80 V | 40 A | 8.2 mOhms | 3 V | Enhancement | Power Clip | |||||
|
5,380
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 8.3 mOhms | 2.2 V | 28 nC | Enhancement | |||||
|
4,027
In-stock
|
Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 5.6 mOhms | 2.1 V | 21 nC | Enhancement | |||||
|
7,312
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 1.6 mOhms | 1.2 V | 44 nC | Enhancement | OptiMOS | ||||
|
2,810
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 14 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | ||||
|
4,829
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 2 mOhms | 1.2 V | 52 nC | Enhancement | |||||
|
10,792
In-stock
|
Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 14.4 mOhms | 4 V | 23 nC | ||||||
|
6,383
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 2.6 mOhms | 26 nC | OptiMOS | ||||||
|
6,017
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 7.3 mOhms | 1 V | 23 nC | Enhancement | OptiMOS | ||||
|
12,597
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 5.4 mOhms | 1.2 V | 13 nC | Enhancement | OptiMOS | ||||
|
4,653
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 19.5 mOhms | 2 V | 17 nC | Enhancement | OptiMOS | ||||
|
5,907
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 1.7 mOhms | 2.2 V | 23 nC | OptiMOS | |||||
|
8,413
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 7.5 mOhms | 15 nC | OptiMOS | ||||||
|
6,500
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 7.3 mOhms | 1 V | 23 nC | Enhancement | OptiMOS | ||||
|
1,675
In-stock
|
STMicroelectronics | MOSFET N-Ch 100 Volt 40 Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 35 mOhms | Enhancement | |||||||
|
8,251
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 6.7 mOhms | 1 V | 27 nC | Enhancement | OptiMOS | ||||
|
GET PRICE |
43,220
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 3 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | |||
|
4,425
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 20 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||||
|
5,110
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 3.5 mOhms | Enhancement | OptiMOS | ||||||
|
4,360
In-stock
|
STMicroelectronics | MOSFET N-Ch 75 Volt 40 Amp | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 40 A | 18 mOhms | Enhancement | |||||||
|
4,071
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.5 mOhms | 1.2 V | 48 nC | Enhancement | |||||
|
4,760
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 2 mOhms | 1.2 V | 52 nC | Enhancement |