- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
-
- 0.065 Ohms (1)
- 10 mOhms (1)
- 110 mOhms (2)
- 140 mOhms (1)
- 145 mOhms (1)
- 15 mOhms (2)
- 150 mOhms (1)
- 16 mOhms (1)
- 170 mOhms (2)
- 18 mOhms (1)
- 210 mOhms (2)
- 260 mOhms (2)
- 32 mOhms (1)
- 33 mOhms (1)
- 45 mOhms (3)
- 57 mOhms (1)
- 6.5 mOhms (1)
- 6.8 mOhms (1)
- 65 mOhms (1)
- 70 mOhms (1)
- 8.4 mOhms (1)
- 80 mOhms (1)
- 85 mOhms (3)
- 88 mOhms (2)
- 9 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
35 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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100
In-stock
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STMicroelectronics | MOSFET N-channel 900 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 40 A | 88 mOhms | 3 V | 89 nC | Enhancement | |||||
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30
In-stock
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IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | +/- 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 40 A | 145 mOhms | 3.5 V | 98 nC | Enhancement | HiPerFET | |||
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82
In-stock
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STMicroelectronics | MOSFET N-channel 900 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 40 A | 88 mOhms | 3 V | 89 nC | Enhancement | |||||
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1,481
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 40 A | 16 mOhms | Enhancement | QFET | |||||
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GET PRICE |
3,010
In-stock
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onsemi | MOSFET 500V N-Channel QFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 40 A | 110 mOhms | Enhancement | QFET | ||||
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595
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 40 A | 0.065 Ohms | 3 V | 70 nC | Enhancement | |||||
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225
In-stock
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IXYS | MOSFET Polar HiperFET Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 40 A | 210 mOhms | 3.5 V to 6.5 V | 230 nC | HyperFET | ||||
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913
In-stock
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Fairchild Semiconductor | MOSFET 100V N-CHANNEL POWERTRENCH MOSFET | 20 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 40 A | 6.5 mOhms | 4 V | 31 nC | PowerTrench | ||||||
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4,405
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 40 A | 70 mOhms | Enhancement | QFET | |||||
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926
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 40 Amp | 17 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 40 A | 33 mOhms | Enhancement | ||||||
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462
In-stock
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STMicroelectronics | MOSFET Low charge STripFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 40 A | 45 mOhms | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET Low charge STripFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 40 A | 45 mOhms | Enhancement | ||||||
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27
In-stock
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IXYS | MOSFET 40 Amps 1100V 0.2600 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1100 V | 40 A | 260 mOhms | Enhancement | HyperFET | |||||
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753
In-stock
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Fairchild Semiconductor | MOSFET N-Ch PowerTrench Logic Level | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 40 A | 15 mOhms | Enhancement | PowerTrench | |||||
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117
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel FRFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 40 A | 110 mOhms | Enhancement | QFET | |||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 40A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 40 A | 10 mOhms | 9 nC | Enhancement | OptiMOS | ||||
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27
In-stock
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IXYS | MOSFET 40 Amps 500V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 40 A | 170 mOhms | 4.5 V | 320 nC | Enhancement | Linear L2 | |||
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18
In-stock
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IXYS | MOSFET 42 Amps 800V 0.15 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 40 A | 150 mOhms | 5 V | 250 nC | Enhancement | PolarHV, ISOPLUS264, HiPerFET | |||
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43
In-stock
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IXYS | MOSFET 40 Amps 500V | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 40 A | 170 mOhms | 4.5 V | 320 nC | Enhancement | Linear L2 | |||
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27
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 40 A | 210 mOhms | 3.5 V to 6.5 V | 230 nC | HyperFET | ||||
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25
In-stock
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IXYS | MOSFET | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.1 kV | 40 A | 260 mOhms | 3.5 V | 300 nC | Enhancement | HyperFET | ||||
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42
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 300 V | 40 A | 85 mOhms | 4 V | 130 nC | Enhancement | Power MOS V | ||||
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GET PRICE |
5,500
In-stock
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Toshiba | MOSFET MOSFET NCh6.8ohm VGS10V10uAVDS100V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 40 A | 6.8 mOhms | 2 V to 4 V | 49 nC | Enhancement | ||||
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316
In-stock
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Toshiba | MOSFET MOSFET NCh 8.4ohm VGS10V10uAVDS60V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 60 V | 40 A | 8.4 mOhms | 2 V to 4 V | 23 nC | Enhancement | |||||
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341
In-stock
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IXYS | MOSFET 300V 40A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 40 A | 80 mOhms | Enhancement | HyperFET | |||||
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1,623
In-stock
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STMicroelectronics | MOSFET N-Ch 30 Volt 40 Amp | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 40 A | 18 mOhms | Enhancement | ||||||
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52
In-stock
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IXYS | MOSFET 500V 40A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 40 A | 140 mOhms | Enhancement | HyperFET | |||||
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2,900
In-stock
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Siliconix / Vishay | MOSFET 650V Vds 250W Pd +/-30V Vds E Series | 30 V | Through Hole | TO-220AB-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 40 A | 57 mOhms | 3 V | 98 nC | Enhancement | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch 120 Volt 40 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 40 A | 32 mOhms | Enhancement | ||||||
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VIEW | Toshiba | MOSFET N-Ch MOS 40A 100V 147W 4000pF 0.015 | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 100 V | 40 A | 15 mOhms |
