- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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2,380
In-stock
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STMicroelectronics | MOSFET N-channel 525 V 6.3 A DPAK | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 525 V | 6 A | 850 mOhms | 33 nC | ||||
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920
In-stock
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STMicroelectronics | MOSFET N-channel 525 V 6.3 A PAK D | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 6 A | 850 mOhms | 33 nC | ||||
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VIEW | Toshiba | MOSFET N-Ch MOS 6A 525V 35W 600pF 1.3 Ohm | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 525 V | 6 A | 1.3 Ohms | |||||||||
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VIEW | Toshiba | MOSFET N-Ch MOS 6A 525V 100W 600pF 1.3 Ohm | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 525 V | 6 A | 1.3 Ohms | ||||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 525V 0.95 Ohm 6A SuperFREDmesh3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 6 A | 1.15 Ohms | 33 nC | Enhancement | |||
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953
In-stock
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STMicroelectronics | MOSFET N-channel 525 V 6.3 A DPAK D | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 6 A | 850 mOhms | 33 nC |
