- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,444
In-stock
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Fairchild Semiconductor | MOSFET Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSF... | 12 V | SMD/SMT | WLCSP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10 A | 13 mOhms | 0.9 V | 17 nC | PowerTrench | ||||
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2,803
In-stock
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Toshiba | MOSFET Small-signal MOSFET | 12 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10 A | 23.8 mOhms | 500 mV | 9.4 nC | Enhancement | ||||
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13
In-stock
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IR / Infineon | MOSFET MOSFT 20V 8.5A 11.7mOhm 2.5V cpbl | 12 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10 A | 11.7 mOhms | 14 nC | Enhancement |
