- Package / Case :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,868
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 30 nC | Enhancement | |||||
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4,624
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 1 V | 30 nC | Enhancement | ||||
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1,237
In-stock
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Diodes Incorporated | MOSFET N-CHAN ENHNCMNT MODE | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | Enhancement | ||||||
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2,611
In-stock
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Infineon Technologies | MOSFET 30V 3.8nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 1.8 V | 10 nC | SmallPowIR |
