- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
-
- 0.275 Ohms (1)
- 0.31 Ohms (1)
- 1.1 Ohms (2)
- 1.2 Ohms (1)
- 1.4 Ohms (1)
- 10 mOhms (1)
- 11.7 mOhms (1)
- 13 mOhms (2)
- 13.4 mOhms (1)
- 130 mOhms (1)
- 14 mOhms (1)
- 14.9 mOhms (1)
- 140 mOhms (3)
- 15 mOhms (1)
- 16 mOhms (3)
- 168 mOhms (1)
- 18 mOhms (1)
- 180 mOhms (4)
- 185 mOhms (3)
- 20 mOhms (4)
- 210 mOhms (1)
- 220 mOhms (1)
- 23.8 mOhms (1)
- 230 mOhms (1)
- 28 mOhms (1)
- 31 mOhms (1)
- 320 mOhms (1)
- 325 mOhms (1)
- 33 mOhms (2)
- 370 mOhms (2)
- 450 mOhms (2)
- 480 mOhms (1)
- 550 mOhms (1)
- 570 mOhms (1)
- 610 mOhms (1)
- 720 mOhms (1)
- 740 mOhms (2)
- 750 mOhms (2)
- 95 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10 nC (1)
- 10.5 nC (1)
- 11 nC (1)
- 13 nC (1)
- 13.3 nC (5)
- 130 nC (1)
- 14 nC (2)
- 15 nC (1)
- 16 nC (2)
- 16.5 nC (1)
- 17 nC (2)
- 19 nC (1)
- 20 nC (1)
- 25.1 nC (2)
- 27 nC (1)
- 29 nC (1)
- 3.7 nC (1)
- 30 nC (2)
- 32 nC (1)
- 36 nC (1)
- 4.7 nC (1)
- 40 nC (1)
- 42 nC (1)
- 45 nC (1)
- 47 nC (1)
- 49 nC (1)
- 5.3 nC (1)
- 7 nC (1)
- 7.9 nC (2)
- 9.4 nC (1)
58 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
7,868
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 30 nC | Enhancement | |||||
|
|
4,697
In-stock
|
Fairchild Semiconductor | MOSFET Single N-Channel Power Trench Mosfet | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 10 A | 18 mOhms | 1.6 V | 14 nC | PowerTrench | |||||
|
|
8,444
In-stock
|
Fairchild Semiconductor | MOSFET Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSF... | 12 V | SMD/SMT | WLCSP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10 A | 13 mOhms | 0.9 V | 17 nC | PowerTrench | ||||
|
|
3,181
In-stock
|
IR / Infineon | MOSFET MOSFT 40V 11A 13mOhm 29nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 10 A | 13 mOhms | 2 V | 29 nC | |||||
|
|
3,127
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 N-CH 60V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 10 A | 14 mOhms | Enhancement | PowerTrench | |||||
|
|
4,624
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 1 V | 30 nC | Enhancement | ||||
|
|
3,247
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 14.9 mOhms | 2 V to 4 V | 40 nC | Enhancement | ||||
|
|
4,659
In-stock
|
STMicroelectronics | MOSFET N-channel 600 V Mdmesh 10A | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10 A | 550 mOhms | 19 nC | ||||||
|
|
5,028
In-stock
|
Infineon Technologies | MOSFET 150V SINGLE N-CH 31mOhms 33nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 10 A | 31 mOhms | 3 V to 5 V | 36 nC | Enhancement | ||||
|
|
3,557
In-stock
|
IR / Infineon | MOSFET MOSFT 80V 10A 13.4mOhm 27nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 80 V | 10 A | 13.4 mOhms | 27 nC | ||||||||
|
|
3,635
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7 | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10 A | 230 mOhms | 3 V to 4 V | 20 nC | Enhancement | CoolMOS | |||
|
|
2,875
In-stock
|
IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 185mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 10 A | 185 mOhms | 13.3 nC | Enhancement | ||||||
|
|
6,312
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10 A | 370 mOhms | 2 V | 17 nC | Enhancement | |||||
|
|
3,714
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | Enhancement | ||||||
|
|
2,913
In-stock
|
Fairchild Semiconductor | MOSFET 30V NCH POWER TRENCH SYNCFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 10 mOhms | Enhancement | PowerTrench SyncFET | |||||
|
|
3,582
In-stock
|
Fairchild Semiconductor | MOSFET 10a 100V 0.165 Ohm 1Ch HS Logic Gate | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 130 mOhms | 3 V | 16 nC | Enhancement | ||||
|
|
784
In-stock
|
Fairchild Semiconductor | MOSFET 500V 10A N-Channel | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 10 A | 610 mOhms | 45 nC | Enhancement | |||||
|
|
2,450
In-stock
|
IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 185mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 185 mOhms | 13.3 nC | Enhancement | ||||||
|
|
740
In-stock
|
STMicroelectronics | MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 10 A | 480 mOhms | 49 nC | Enhancement | |||||
|
|
888
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 10 A | 325 mOhms | 2 V | 15 nC | Enhancement | ||||
|
|
3,864
In-stock
|
STMicroelectronics | MOSFET Automotive-grade N-channel 30 V, 25 mOhm typ, 10 A STripFE... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 33 mOhms | 1 V | 3.7 nC | Enhancement | ||||
|
|
7,939
In-stock
|
Diodes Incorporated | MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm | 20 V, 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 16 mOhms | 1.4 V | 25.1 nC | Enhancement | ||||
|
|
2,728
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 10 A | 210 mOhms | 5.3 nC | ||||||||
|
|
595
In-stock
|
IXYS | MOSFET 600V 10A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10 A | 740 mOhms | 5.5 V | 32 nC | Enhancement | ||||
|
|
1,537
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Ch QFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 10 A | 140 mOhms | Enhancement | ||||||
|
|
2,495
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | Enhancement | ||||||
|
|
1,539
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 180mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | 13.3 nC | Enhancement | |||||
|
|
2,841
In-stock
|
Diodes Incorporated | MOSFET MOSFET N-CHANNEL | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 16 mOhms | 4.7 nC | ||||||
|
|
3,395
In-stock
|
Diodes Incorporated | MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 33 mOhms | Enhancement | ||||||
|
|
1,237
In-stock
|
Diodes Incorporated | MOSFET N-CHAN ENHNCMNT MODE | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | Enhancement |
