- Mounting Style :
- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
28 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,687
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 1.5 A | 4.5 Ohms | 3 V | 4 nC | Enhancement | CoolMOS | |||||
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1,515
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-251-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 1.5 A | 4.5 Ohms | 3 V | 4 nC | Enhancement | CoolMOS | |||||
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10,919
In-stock
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onsemi | MOSFET NFET SOT23 30V 2A 0.110R | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.5 A | 85 mOhms | 3.6 nC | |||||||
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4,284
In-stock
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Fairchild Semiconductor | MOSFET 20V N-Ch PowerTrench | 8 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 90 mOhms | Enhancement | PowerTrench | ||||||
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1,309
In-stock
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Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1.5 A | 6.3 Ohms | Enhancement | QFET | ||||||
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924
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1050 V | 1.5 A | 6 Ohms | 3 V | 10 nC | Enhancement | |||||
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4,608
In-stock
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onsemi | MOSFET NFET WDFN6 30V 1.5A 200mOhm | 8 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.5 A | 145 mOhms | 1.1 V | 1.4 nC | ||||||
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1,216
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 1.5 A | 8 Ohms | 4 V | 10 nC | Enhancement | |||||
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31
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 1.5 A | 40 Ohms | 2 V | 41 nC | Enhancement | |||||
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2,901
In-stock
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STMicroelectronics | MOSFET N-Ch, 450V-4.1ohms 1.5A | 30 V | Through Hole | TO-251-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 450 V | 1.5 A | 4.5 Ohms | 7 nC | Enhancement | ||||||
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15,594
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 1.5A SOT-323-3 | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 106 mOhms | 700 mV | 800 pC | Enhancement | |||||
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3,656
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 1.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 106 mOhms | 700 mV | 800 pC | Enhancement | |||||
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770
In-stock
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Fairchild Semiconductor | MOSFET NCH 800V 2A MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1.5 A | 4.9 Ohms | 5 V | 12 nC | QFET | |||||
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6,619
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 1.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 106 mOhms | 700 mV | 800 pC | Enhancement | |||||
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5,775
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 111 mOhms | 700 mV | 800 pC | Enhancement | |||||
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2,720
In-stock
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Nexperia | MOSFET PMV230ENEA/TO-236AB/REEL 7" Q3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.5 A | 176 mOhms | 1.3 V | 4.8 nC | Enhancement | |||||
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GET PRICE |
11,420
In-stock
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onsemi | MOSFET EXPD NCH+NCH 1.5A 60V | SOIC-8 | Reel | Si | N-Channel | 60 V | 1.5 A | 400 mOhms | ||||||||||||
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7,940
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 111 mOhms | 700 mV | 800 pC | Enhancement | |||||
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11,588
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 1.5A SOT-323-3 | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 106 mOhms | 700 mV | 800 pC | Enhancement | |||||
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17
In-stock
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Fairchild Semiconductor | MOSFET 20V N-Ch PowerTrench | 8 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 90 mOhms | Enhancement | PowerTrench | ||||||
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2,997
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 1.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 106 mOhms | 700 mV | 800 pC | Enhancement | |||||
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2,546
In-stock
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Texas instruments | MOSFET 30V,N-Ch FemtoFET MOSFET | 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.5 A | 260 mOhms | 850 mV | 1.01 nC | ||||||
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14,060
In-stock
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Texas instruments | MOSFET 30V N-CH Pwr MOSFET | 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.5 A | 260 mOhms | 850 mV | 1.01 nC | FemtoFET | |||||
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379
In-stock
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IXYS | MOSFET 1 Amps 2500V 40 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 1.5 A | 40 Ohms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 1.5 Amps 1000V 11 Ohms Rds | Tube | Si | 1000 V | 1.5 A | 11 Ohms | |||||||||||||||
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VIEW | IXYS | MOSFET 1.5 Amps 1000V 11 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.5 A | 11 Ohms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 0.1 Amps 1000V 80 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.5 A | 11 Ohms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 1 Amps 1000V | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.5 A | 11 Ohms | Enhancement |