- Manufacture :
- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
1,461
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 8 mOhms | 113.3 nC | ||||||
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GET PRICE |
15,810
In-stock
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IR / Infineon | MOSFET MOSFT 55V 110A 8mOhm 97.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 110 A | 8 mOhms | 97.3 nC | ||||||
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GET PRICE |
322
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 8mOhms 97.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 8 mOhms | 97.3 nC | Enhancement | |||
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GET PRICE |
468,200
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 110A 8mOhm 97.3nC | 20 V | Through Hole | TO-220 | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 8 mOhms | 97.3 nC | ||||||
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VIEW | Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 8mOhms 97.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 110 A | 8 mOhms | 2 V to 4 V | 97.3 nC | Enhancement |
