- Mounting Style :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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81
In-stock
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IXYS | MOSFET 60V/220A TrenchT3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | ||
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GET PRICE |
87
In-stock
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IXYS | MOSFET 60V/220A TrenchT3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | ||
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GET PRICE |
1,731
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 220 A | 6.1 mOhms | 2 V | 86 nC | Enhancement | PowerTrench | ||
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GET PRICE |
1,850
In-stock
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Fairchild Semiconductor | MOSFET TO-leadless MV7 80V | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 220 A | 6.1 mOhms | 2 V | 86 nC | Enhancement | PowerTrench | ||
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GET PRICE |
3,236
In-stock
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Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 1.25mOhms 46nC | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 25 V | 220 A | 1.6 mOhms | 46 nC | Directfet | ||||||
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2,282
In-stock
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IR / Infineon | MOSFET MOSFT 55V 220A 3.3mOhm 190nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 220 A | 3.3 mOhms | 190 nC | |||||||
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GET PRICE |
766
In-stock
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onsemi | MOSFET NFET D2PAK 60V 169A 3MOHM | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 220 A | 2.8 mOhms | |||||||
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GET PRICE |
183
In-stock
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IXYS | MOSFET 220 Amps 40V 0.0035 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 220 A | 3.5 mOhms | Enhancement | |||||
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GET PRICE |
193
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH 3.3mOhm HEXFET 75A ID | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 220 A | 3.3 mOhms | 190 nC | Enhancement | ||||
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GET PRICE |
91
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET Pwr MOSFET | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 170 V | 220 A | 6.3 mOhms | 5 V | 500 nC | Enhancement | GigaMOS, HiperFET | ||
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GET PRICE |
15
In-stock
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IXYS | MOSFET 220Amps 150V | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 220 A | 9 mOhms | 4.5 V | 162 nC | Enhancement | Polar, HiPerFET | ||
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GET PRICE |
100
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET Pwr MOSFET | Through Hole | TO-247-3 | Tube | Si | N-Channel | 170 V | 220 A | 6.3 mOhms | HiPerFET | |||||||||
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GET PRICE |
62
In-stock
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IXYS | MOSFET 60V/220A TrenchT3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | ||
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VIEW | IXYS | MOSFET 220 Amps 40V 0.0035 Rds | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 220 A | 2.8 mOhms | 4 V | 112 nC | Enhancement | TrenchT2 | |||
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GET PRICE |
39
In-stock
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IXYS | MOSFET 220 Amps 40V 0.0035 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 220 A | 2.8 mOhms | 4 V | 112 nC | Enhancement | TrenchT2 |
