- Mounting Style :
- Packaging :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Channel Mode :
- Applied Filters :
24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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36,021
In-stock
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Nexperia | MOSFET Single N-Channel 60V 300mA | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 350 mA | 2.8 Ohms | 0.2 nC | Enhancement | ||||
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25,096
In-stock
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Nexperia | MOSFET 30V 350 MA N-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 350 mA | 1.4 Ohms | 0.9 V | 0.52 nC | ||||
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5,302
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel QFET | 30 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 500 V | 350 mA | 5.3 Ohms | Enhancement | |||||
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7,330
In-stock
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onsemi | MOSFET PCH+NCH 2.5V DRIVE SERIES | 10 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 350 mA | 3.7 Ohms | 1.58 nC | |||||
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1,882
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4.2 Ohms | - 2.1 V | 5.7 nC | Depletion | |||
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5,961
In-stock
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Nexperia | MOSFET 30V 350 MA DUAL N-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 350 mA | 1.4 Ohms | Enhancement | |||||
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2,195
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4.2 Ohms | - 2.1 V | 5.7 nC | Depletion | |||
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1,041
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4.2 Ohms | - 2.1 V | 5.7 nC | Depletion | |||
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1,421
In-stock
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Infineon Technologies | MOSFET SIPMOS Sm-Signal 240V 6Ohm 350mA | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4.2 Ohms | 800 mV | 6.4 nC | Enhancement | |||
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1,658
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4 Ohms | 600 mV | 6.8 nC | Enhancement | |||
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1,245
In-stock
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Infineon Technologies | MOSFET SIPMOS Sm-Signal 240V 6Ohm 350mA | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4.2 Ohms | 800 mV | 6.4 nC | Enhancement | |||
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2,644
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4 Ohms | 600 mV | 6.8 nC | Enhancement | |||
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4,649
In-stock
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onsemi | MOSFET NCH 350MA 250V 2.5V | 10 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 350 mA | 5 Ohms | 400 mV | 2.1 nC | Enhancement | ||||
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VIEW | Nexperia | MOSFET NX7002BKM/XQFN3/REEL 7" Q1/T1 | 20 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 350 mA | 2.2 Ohms | 1.1 V | 1 nC | Enhancement | |||
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5,736
In-stock
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onsemi | MOSFET POWER MOSFET | 10 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 350 mA | 3.7 Ohms | ||||||
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20,100
In-stock
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Nexperia | MOSFET TAPE-7 MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 350 mA | 6 Ohms | Enhancement | |||||
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240
In-stock
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Nexperia | MOSFET NX7002BKMB/XQFN3/REEL 7" Q1/T1 | 20 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 350 mA | 2.2 Ohms | 1.1 V | 1 nC | Enhancement | |||
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5,661
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 350 mA | 2.8 Ohms | 1.5 V | 0.9 nC | Enhancement | |||
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4,000
In-stock
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Nexperia | MOSFET MOSFET N-CH DUAL 60V | 20 V | SMD/SMT | SOT-666-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 350 mA | 1.6 Ohms | 1.75 V | 0.8 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 240V 50mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4.2 Ohms | - 2.1 V | 5.7 nC | Depletion | |||
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VIEW | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 350 mA | 2.8 Ohms | 1.5 V | 0.9 nC | Enhancement | |||
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VIEW | Renesas Electronics | MOSFET DUAL MOSFET NCH SC-88(6PINSUPE | 12 V | SC-88-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 350 mA | 570 mOhms | Enhancement | ||||||
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2,016
In-stock
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onsemi | MOSFET NCH 350MA 250V 2.5V DRIVE | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 350 mA | 5 Ohms | 400 mV | 2.1 nC | Enhancement | |||
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33
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 6.5 Ohms | Depletion |
