- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,967
In-stock
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Infineon Technologies | MOSFET MOSFT 25V 57A 8.7mOhm 6.8nC LogLvl | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 57 A | 10.6 mOhms | 1.9 V | 6.8 nC | ||||
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537
In-stock
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IR / Infineon | MOSFET MOSFT 57A 8.7mOhm 25V 6.8nC Qg log lvl | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 25 V | 57 A | 12.9 mOhms | 6.8 nC | |||||||
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22
In-stock
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IR / Infineon | MOSFET 25V 1 N-CH HEXFET 8.7mOhms 6.8nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 25 V | 57 A | 12.9 mOhms | 1.35 V to 2.35 V | 6.8 nC | Enhancement |
