- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,191
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 57 A | 15 mOhms | Enhancement | PowerTrench | |||||
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631
In-stock
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IR / Infineon | MOSFET MOSFT 60V 57A 12mOhm 43nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 57 A | 9.6 mOhms | 4 V | 43 nC | |||||
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578
In-stock
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Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 57 A | 12 mOhms | 4 V | 43 nC | |||||
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VIEW | Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 60 V | 57 A | 12 mOhms | 43 nC | Enhancement |
