- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- ChipFET-8 (1)
- DFN1010D-3 (1)
- DFN3020-B-8 (1)
- ISOPLUS-227-4 (3)
- MicroFET-6 (3)
- SO-8 (1)
- SOT-223-3 (3)
- SOT-223-4 (1)
- SOT-227-4 (3)
- SOT-23-3 (6)
- SOT-323-6 (1)
- SOT-363-6 (2)
- SOT-89-3 (1)
- SSOT-3 (1)
- TFP-4 (1)
- TO-220-3 (5)
- TO-220FP-3 (2)
- TO-247-3 (11)
- TO-247-4 (1)
- TO-252-3 (3)
- TO-263-3 (3)
- TO-263-7 (1)
- TO-264-3 (1)
- TO-268-3 (1)
- TO-3P-3 (1)
- V1-A-Pack-10 (1)
- X1-DFN1616-6 (1)
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 1.5 A (1)
- - 17 A (1)
- - 18 A (3)
- - 18.5 A (1)
- - 2 A (1)
- - 2.2 A (1)
- - 2.3 A (1)
- - 22 A (1)
- - 3 A (3)
- - 3.6 A (1)
- - 3.8 A (1)
- - 4.1 A (1)
- 1.4 A (2)
- 1.7 A (1)
- 14 A (1)
- 18 A (2)
- 2.5 A (3)
- 2.9 A (1)
- 22 A (2)
- 23 A (1)
- 24 A (3)
- 25 A (3)
- 26 A (1)
- 3 A (4)
- 3.2 A (1)
- 3.3 A (1)
- 3.7 A (1)
- 31 A (1)
- 35 A (1)
- 39 A (3)
- 44 A (6)
- 45 A (2)
- 50 A (1)
- 52 A (3)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
60 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,990
In-stock
|
onsemi | MOSFET 60V 3A N-Channel | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3 A | 120 mOhms | Enhancement | |||||||
|
5,402
In-stock
|
Fairchild Semiconductor | MOSFET 150V 14a 0.120 Ohm | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 14 A | 120 mOhms | Enhancement | PowerTrench | ||||||
|
5,468
In-stock
|
Fairchild Semiconductor | MOSFET UniFET 200V | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 120 mOhms | UniFET | |||||||
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7,220
In-stock
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Fairchild Semiconductor | MOSFET Single N-Ch 500V .12Ohm SMPS | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 120 mOhms | Enhancement | |||||||
|
423
In-stock
|
IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 52 A | 120 mOhms | Polar2 HiPerFET | |||||||
|
886
In-stock
|
STMicroelectronics | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 26 A | 120 mOhms | 4 V | 44 nC | Enhancement | |||||
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4,755
In-stock
|
Fairchild Semiconductor | MOSFET P-Ch PowerTrench Specified 2.5V | 12 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 120 mOhms | Enhancement | PowerTrench | ||||||
|
3,988
In-stock
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Fairchild Semiconductor | MOSFET MLP 2X2 DUAL INTEGRATED PCH PO | 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 3 A | 120 mOhms | Enhancement | PowerTrench | ||||||
|
GET PRICE |
12,490
In-stock
|
onsemi | MOSFET 500V N Channel MOSFET FRFET | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 45 A | 120 mOhms | |||||||||||
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521
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 120 mOhms | 3 V | 37 nC | ||||||
|
413
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2 | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 120 mOhms | 3 V | 37 nC | ||||||
|
521
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 120 mOhms | 3 V | 37 nC | ||||||
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192
In-stock
|
IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 50 A | 120 mOhms | 5 V | 85 nC | Enhancement | Polar3, HiperFET | ||||
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3,842
In-stock
|
onsemi | MOSFET NFET 60V 3A 0.120R | SMD/SMT | SOT-223-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 3 A | 120 mOhms | |||||||||||
|
4,208
In-stock
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Diodes Incorporated | MOSFET 30V DUAL N-CH ENH 20V VGS 3.7 IDS | 20 V | SMD/SMT | DFN3020-B-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 3.7 A | 120 mOhms | 3.9 nC | Enhancement | ||||||
|
GET PRICE |
32,980
In-stock
|
Diodes Incorporated | MOSFET P-Channel 1.25W | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 120 mOhms | Enhancement | ||||||
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1,337
In-stock
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Fairchild Semiconductor | MOSFET MLP 2X2 DUAL PCH POWER TRENCH | 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 2.2 A | 120 mOhms | Enhancement | PowerTrench | ||||||
|
GET PRICE |
15,240
In-stock
|
onsemi | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 17 A | 120 mOhms | Enhancement | QFET | |||||
|
1,886
In-stock
|
onsemi | MOSFET NFET 60V 3A 0.120R | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3 A | 120 mOhms | ||||||||
|
210
In-stock
|
IXYS | MOSFET -100V -18A | 15 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 18 A | 120 mOhms | - 2.5 V to - 4.5 V | 39 nC | Enhancement | |||||
|
1,636
In-stock
|
Diodes Incorporated | MOSFET 60V P-Ch Enh FET 20Vgs -14A 1.6W | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3.6 A | 120 mOhms | - 3 V | 14 nC | Enhancement | |||||
|
3,558
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL N-CH | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 120 mOhms | 1.2 V | 600 pC | Enhancement | |||||
|
4,915
In-stock
|
Diodes Incorporated | MOSFET N-Ch 31V to 99V 60V 120mOhm 606pF | 20 V | SMD/SMT | X1-DFN1616-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 120 mOhms | 3 V | 12.3 nC | Enhancement | |||||
|
1,631
In-stock
|
Nexperia | MOSFET 20 V, N-channel Trench MOSFET | 8 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 120 mOhms | 400 mV | 5.7 nC | Enhancement | |||||
|
557
In-stock
|
Infineon Technologies | MOSFET N and P-Ch 60V 3A, -2A DSO-8 | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V | 3 A | 120 mOhms | 4 V | 3 nC | Enhancement | SIPMOS | ||||
|
390
In-stock
|
IXYS | MOSFET 18 Amps 100V 0.12 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 18 A | 120 mOhms | - 4.5 V | 39 nC | Enhancement | TrenchP | |||||
|
49
In-stock
|
IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 52 A | 120 mOhms | Polar2 HiPerFET | |||||||
|
30
In-stock
|
IXYS | MOSFET PolarP2 Power MOSFET | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 52 A | 120 mOhms | Polar2 HiPerFET | |||||||
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13,559
In-stock
|
Nexperia | MOSFET 20V P-channel Trench MOSFET | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.3 A | 120 mOhms | - 950 mV | 3.7 nC | Enhancement | |||||
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161,000
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 120 mOhms | - 1.2 V | 5.5 nC | Enhancement |