- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
54 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
11,342
In-stock
|
Diodes Incorporated | MOSFET 20V N-Chnl HDMOS | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.7 A | 180 mOhms | Enhancement | |||||||
|
7,116
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | Enhancement | |||||||
|
4,573
In-stock
|
Fairchild Semiconductor | MOSFET N-Ch LL FET Enhancement Mode | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 180 mOhms | Enhancement | |||||||
|
GET PRICE |
20,000
In-stock
|
onsemi | MOSFET 200V N-Channel a-FET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 180 mOhms | Enhancement | ||||||
|
1,055
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||||
|
777
In-stock
|
STMicroelectronics | MOSFET N-Ch, 600V-0.15ohms FDMesh 20A | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 19.5 A | 180 mOhms | Enhancement | |||||||
|
9,047
In-stock
|
Diodes Incorporated | MOSFET 20V N Chnl HDMOS | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.7 A | 180 mOhms | Enhancement | |||||||
|
1,211
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.150 Ohm 19.5A FDmesh II MOS | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 19.5 A | 180 mOhms | Enhancement | |||||||
|
1,278
In-stock
|
STMicroelectronics | MOSFET N-Ch 330V 18A MOS STripFET II D2PAK | SMD/SMT | TO-263-3 | Reel | Si | N-Channel | 330 V | 18 A | 180 mOhms | 44 nC | |||||||||||
|
1,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||||
|
6,549
In-stock
|
Diodes Incorporated | MOSFET 30V N-Chnl UMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2 A | 180 mOhms | Enhancement | |||||||
|
3,714
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | Enhancement | |||||||
|
3,145
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/100V/12.8A 0.18OHM | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 12.8 A | 180 mOhms | Enhancement | QFET | ||||||
|
2,352
In-stock
|
Fairchild Semiconductor | MOSFET 60V Single N-Ch | 15 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 12 A | 180 mOhms | Enhancement | |||||||
|
636
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel a-FET Logic Level | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 9.8 A | 180 mOhms | Enhancement | |||||||
|
740
In-stock
|
Infineon Technologies | MOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 17 A | 180 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | ||||
|
456
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 16A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||||
|
4,263
In-stock
|
Diodes Incorporated | MOSFET 30V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3 A | 180 mOhms | Enhancement | |||||||
|
8,300
In-stock
|
onsemi | MOSFET LOW-NOISE AMPLIFIER | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.8 A | 180 mOhms | 2 nC | |||||||
|
2,495
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | Enhancement | |||||||
|
744
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 12.8 A | 180 mOhms | Enhancement | QFET | ||||||
|
1,174
In-stock
|
Infineon Technologies | MOSFET MOSFT 10A 13.3nC 180mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | 13.3 nC | |||||||||
|
293
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 16A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||||
|
2,075
In-stock
|
onsemi | MOSFET NCH 100V 9A TP-FA(DPAK) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 9 A | 180 mOhms | 1.5 V | 9.8 nC | Enhancement | |||||
|
1,539
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 180mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | 13.3 nC | Enhancement | ||||||
|
5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 16A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||||
|
50
In-stock
|
IXYS | MOSFET Polar3 HiPerFET Power MOSFET | Through Hole | TO-247-3 | Tube | Si | N-Channel | 500 V | 34 A | 180 mOhms | HyperFET | |||||||||||
|
219
In-stock
|
IR / Infineon | MOSFET 150V 1 N-CH HEXFET 180mOhms 19nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 14 A | 180 mOhms | 3 V to 5.5 V | 19 nC | Enhancement | |||||
|
328
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 10A 180mOhm 13.3nC LogLv | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | 13.3 nC | |||||||||
|
28
In-stock
|
IXYS | MOSFET 20 Amps 600V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20 A | 180 mOhms | 3 V | 32 nC | Enhancement | CoolMOS |