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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPP034NE7N3 G
1+
$2.820
10+
$2.400
100+
$1.920
500+
$1.680
RFQ
2,406
In-stock
Infineon Technologies MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 75 V 100 A 3.4 mOhms 3.1 V 88 nC   OptiMOS
IPP034N03L G
1+
$1.460
10+
$1.240
100+
$0.952
500+
$0.841
RFQ
2,184
In-stock
Infineon Technologies MOSFET N-Ch 30V 80A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 30 V 80 A 3.4 mOhms     Enhancement OptiMOS
IPP027N08N5AKSA1
1+
$3.530
10+
$3.000
100+
$2.600
250+
$2.470
RFQ
395
In-stock
Infineon Technologies MOSFET N-Ch 80V 120A TO220-3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 80 V 120 A 3.4 mOhms 2.2 V 99 nC Enhancement  
CSD19535KCS
1+
$2.960
10+
$2.660
25+
$2.560
100+
$2.180
RFQ
312
In-stock
Texas instruments MOSFET 100V N-CH NexFET Pwr MOSFET 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 50 A 3.4 mOhms 2.7 V 78 nC   NexFET
IPP80N04S2L-03
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 40V 80A TO220-3 OptiMOS 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 40 V 80 A 3.4 mOhms     Enhancement OptiMOS
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