- Mounting Style :
- Package / Case :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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14,970
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 78A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 78 A | 3.7 mOhms | 17 nC | OptiMOS | ||||
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248
In-stock
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STMicroelectronics | MOSFET N-Ch 30V 0.0037 Ohm 80A STripFET VI | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.7 mOhms | 2.5 V | 20 nC | ||||||
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370
In-stock
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onsemi | MOSFET NFET SO8FL 30V | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 93 A | 3.7 mOhms | 1.63 V | 49.4 nC | ||||
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2,474
In-stock
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Texas instruments | MOSFET 30V,NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 3.7 mOhms | 1.3 V | 13.2 nC | NexFET | |||
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1,415
In-stock
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onsemi | MOSFET NFET IPAK 30V 79A 3.7 mOhm | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 79 A | 3.7 mOhms | ||||||
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8,000
In-stock
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IR / Infineon | MOSFET MOSFT 30V 20A 4mOhm 34nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 3.7 mOhms | 2.32 V | 34 nC |
