- Package / Case :
- Number of Channels :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,669
In-stock
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Fairchild Semiconductor | MOSFET 25V Dual N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 15 A | 5.6 mOhms | 19 nC, 45 nC | Power Stage PowerTrench | |||||
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4,800
In-stock
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Infineon Technologies | MOSFET DirectFET | SMD/SMT | DirectFET-S1 | Reel | Si | N-Channel | 25 V | 16 A | 5.6 mOhms | Directfet | ||||||||||
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3,562
In-stock
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Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 5.6 mOhms | 1.6 V | 9 nC | Enhancement | NexFET | |||
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4,494
In-stock
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Infineon Technologies | MOSFET 25V Single N-Ch HEXFET PWR 50A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 20 A | 5.6 mOhms | 1.6 V | 17 nC | FastIRFet | ||||
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551
In-stock
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IR / Infineon | MOSFET 25V Single N-Ch HEXFET PWR 50A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 22 A | 5.6 mOhms | 1.6 V | 17 nC | FastIRFet |
