- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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984
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 10 A | 370 mOhms | 3 V | 16.5 nC | Enhancement | |||||
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908
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 10 A | 370 mOhms | 3 V | 16.5 nC | Enhancement | |||||
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1,880
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 300 A | 370 mOhms | 700 mV | 336 nC | Enhancement | OptiMOS | |||
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1,982
In-stock
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Infineon Technologies | MOSFET LV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 300 A | 370 mOhms | 700 mV | 336 nC | Enhancement | OptiMOS | |||
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25,820
In-stock
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STMicroelectronics | MOSFET N-Ch 800 V 0.37 Ohm 12 A Zener-protect | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 370 mOhms | 4 V | 29 nC | Enhancement | ||||
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1,200
In-stock
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STMicroelectronics | MOSFET N-Ch 800 V 0.37 Ohm 12 A Zener-protect | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 370 mOhms | 4 V | 29 nC | Enhancement | ||||
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6,312
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10 A | 370 mOhms | 2 V | 17 nC | Enhancement | |||||
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615
In-stock
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Fairchild Semiconductor | MOSFET 500V 15A N-Chan FRFET UniFET | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 15 A | 370 mOhms | 5 V | 32 nC | UniFET FRFET | ||||||
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579
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | + 150 C | 1 Channel | Si | N-Channel | 650 V | 10 A | 370 mOhms | 2 V | 17 nC | Enhancement | ||||||
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848
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10 A | 370 mOhms | 2 V | 17 nC | Enhancement | |||||
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7,148
In-stock
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Nexperia | MOSFET 30V N-channel Trench MOSFET | 8 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 900 mA | 370 mOhms | 770 mV | 0.77 nC | Enhancement | ||||
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143
In-stock
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Toshiba | MOSFET N-Ch MOS 15A 600V 50W 2600pF 0.37 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 600 V | 15 A | 370 mOhms | |||||||||||
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27
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 30 A | 370 mOhms | 2.5 V | 260 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET N-Ch MOS 14A 550V 50W 2300pF 0.37 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 550 V | 14 A | 370 mOhms | |||||||||||
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VIEW | Nexperia | MOSFET BISS | 8 V | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 660 mA | 370 mOhms | 0.89 nC | |||||||
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2,348
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10 A | 370 mOhms | 3 V | 16.5 nC | Enhancement |
