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16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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320
In-stock
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IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 420 A | 2.3 mOhms | 5 V | 670 nC | Enhancement | HiPerFET | ||||||
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1,262
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.3 mOhms | 3.5 V | 180 nC | ||||||
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3,000
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 1.9mOhm 193A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.3 mOhms | 2.2 V to 3.9 V | 107 nC | Enhancement | CoolIRFet | ||||
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2,990
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 270 A | 2.3 mOhms | 160 nC | Enhancement | |||||||
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954
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 180 A | 2.3 mOhms | 2 V | 183 nC | Enhancement | |||||
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98
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 2.3mOhms 160nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 280 A | 2.3 mOhms | 160 nC | Enhancement | ||||||
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272
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 270 A | 2.3 mOhms | 160 nC | Enhancement | |||||||
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700
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 OptiMOS-T2 | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.3 mOhms | 1 V | 140 nC | Enhancement | OptiMOS | ||||
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65
In-stock
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IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 400A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 400 A | 2.3 mOhms | 4 V | 420 nC | Enhancement | TrenchT2, HiperFET | |||||
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264
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 280A 2.3mOhm 160nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 280 A | 2.3 mOhms | 160 nC | |||||||||
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35
In-stock
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IXYS | MOSFET TrenchT2 HiperFETs Power MOSFET | Through Hole | TO-268-3 | Tube | Si | N-Channel | 75 V | 400 A | 2.3 mOhms | HiPerFET | |||||||||||
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174
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 1.9mOhm 120A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.3 mOhms | 2.2 V to 3.9 V | 107 nC | Enhancement | CoolIRFet | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 90A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.3 mOhms | OptiMOS | ||||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 OptiMOS-T2 | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.3 mOhms | 1 V | 140 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 120A TO220-3 OptiMOS-T | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.3 mOhms | Enhancement | OptiMOS | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 270 A | 2.3 mOhms | 160 nC | Enhancement |