MOSFET - Kaimeite

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6 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	AUIRF2804S	1+ $3.510 10+ $2.990 100+ $2.590 250+ $2.460		PDF RFQ	2,990 In-stock	Infineon Technologies	MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms	20 V	SMD/SMT	TO-263-3	- 55 C		Tube	1 Channel	Si	N-Channel	40 V	270 A	2.3 mOhms		160 nC	Enhancement
	IRF2804SPBF	1+ $2.780 10+ $2.360 100+ $2.050 250+ $1.940		PDF RFQ	98 In-stock	Infineon Technologies	MOSFET 40V 1 N-CH HEXFET 2.3mOhms 160nC	20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	40 V	280 A	2.3 mOhms		160 nC	Enhancement
	AUIRF2804L	1+ $3.510 10+ $2.990 100+ $2.590 250+ $2.460		PDF RFQ	272 In-stock	Infineon Technologies	MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms	20 V	Through Hole	TO-262-3	- 55 C		Tube	1 Channel	Si	N-Channel	40 V	270 A	2.3 mOhms		160 nC	Enhancement
	IRF2804LPBF	1+ $2.630 10+ $2.240 100+ $1.790 250+ $1.700		PDF RFQ	264 In-stock	Infineon Technologies	MOSFET MOSFT 40V 280A 2.3mOhm 160nC	20 V	Through Hole	TO-262-3			Tube	1 Channel	Si	N-Channel	40 V	280 A	2.3 mOhms		160 nC
	AUIRF2804	7500+ $1.610	GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms	20 V	Through Hole	TO-220-3	- 55 C		Tube	1 Channel	Si	N-Channel	40 V	270 A	2.3 mOhms		160 nC	Enhancement
	IPB120N06S4-03		GET PRICE	PDF RFQ	2,700 In-stock	Infineon Technologies	MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2	20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	60 V	120 A	2.3 mOhms	2 V	160 nC	Enhancement	OptiMOS

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