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15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,940
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | |||||||||
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2,282
In-stock
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IR / Infineon | MOSFET MOSFT 55V 220A 3.3mOhm 190nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 220 A | 3.3 mOhms | 190 nC | |||||||||
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GET PRICE |
47,400
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 170A 4.1mOhm 120nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC | ||||||||
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776
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | |||||||||
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1,200
In-stock
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Infineon Technologies | MOSFET 40V 118A 3.3 mOhm HEXFET 62nC 99W | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 40 V | 123 A | 3.3 mOhms | 93 nC | StrongIRFET | |||||||||
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198
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 170A 4.1mOhm 120nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC | |||||||||
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961
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.3 mOhms | 2 V | 98 nC | Enhancement | OptiMOS | ||||
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263
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T2 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.3 mOhms | OptiMOS | ||||||||||
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121
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 60 V | 71 A | 3.3 mOhms | 4 V | 90 nC | Enhancement | ||||||
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50
In-stock
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IXYS | MOSFET TRENCHT2 PWR MOSFET 55V 260A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 55 V | 260 A | 3.3 mOhms | 4 V | 140 nC | Enhancement | TrenchT2 | |||||
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47
In-stock
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Toshiba | MOSFET N-Ch 60V 3280pF 48.2nC 106A 87W | 20 V | Through Hole | TO-220-3 | + 175 C | 1 Channel | Si | N-Channel | 60 V | 106 A | 3.3 mOhms | 1.5 V | 48.2 nC | Enhancement | |||||||
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276
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TO220-3 OptiMOS-T | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.3 mOhms | Enhancement | OptiMOS | ||||||
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3,962
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.3 mOhms | 2 V | 98 nC | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 240 A | 3.3 mOhms | 130 nC | Enhancement | ||||||
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475
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.3 mOhms | Enhancement | OptiMOS |