- Manufacture :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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230
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.25Ohm 13A FDMesh II | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 290 mOhms | 4 V | 34 nC | |||||
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71
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1000 V | 37 A | 290 mOhms | 4 V | 305 nC | Enhancement | POWER MOS 8 | ||||
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764
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.25Ohm 13A FDmesh II | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 290 mOhms | 4 V | 34 nC | |||||
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VIEW | STMicroelectronics | MOSFET N-CH 600V 0.25Ohm 13A Fdmesh II | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 290 mOhms | 4 V | 34 nC | |||||
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209
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.25Ohm 13A Fdmesh II | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 290 mOhms | 4 V | 34 nC |
