- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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37 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,068
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 8mOhms 44nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 12 mOhms | 3 V | 44 nC | Enhancement | |||||
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420
In-stock
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IXYS | MOSFET -170.0 Amps -100V 0.012 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 170 A | 12 mOhms | ||||||||
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2,020
In-stock
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IR / Infineon | MOSFET MOSFT 55V 72A 12mOhm 86.7nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 72 A | 12 mOhms | 86.7 nC | |||||||||
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90
In-stock
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STMicroelectronics | MOSFET POWER MOSFET N-CH 200V | SMD/SMT | ISOTOP-4 | Tube | Si | N-Channel | 200 V | 140 A | 12 mOhms | ||||||||||||
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4,320
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 81A 12mOhm 86.6nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 81 A | 12 mOhms | 86.6 nC | |||||||||
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1,407
In-stock
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Fairchild Semiconductor | MOSFET 75a 55V 0.012Ohm NCh UltraFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 75 A | 12 mOhms | Enhancement | UltraFET | ||||||
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GET PRICE |
12,870
In-stock
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onsemi | MOSFET 100V N-Channel PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 57 A | 12 mOhms | Enhancement | PowerTrench | |||||
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884
In-stock
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Fairchild Semiconductor | MOSFET N Chan 100V 12Mohm | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 74 A | 12 mOhms | Enhancement | PowerTrench | ||||||
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457
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 78A 15.5mOhm 71nC Qg | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 78 A | 12 mOhms | 71 nC | |||||||||
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1,487
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 57A 12mOhm 43nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 57 A | 12 mOhms | 43 nC | |||||||||
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137,500
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 86A 8mOhm 40nC Log LvlAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 40 nC | |||||||||
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211
In-stock
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IXYS | MOSFET 175V 150A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 175 V | 150 A | 12 mOhms | 2.5 V to 4.5 V | 63 nC | Enhancement | |||||
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1,000
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 44A 12mOhm 86.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 44 A | 12 mOhms | 86.7 nC | |||||||||
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131
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 83A 15mOhm 71nC Qg | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 83 A | 12 mOhms | 71 nC | |||||||||
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897
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 72A 12mOhm 73.3nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 72 A | 12 mOhms | 4 V | 73.3 nC | ||||||
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169
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 15mOhms 71nC | 30 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 83 A | 12 mOhms | 71 nC | |||||||||
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205
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 83A 15mOhm 72nC | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 83 A | 12 mOhms | 72 nC | |||||||||
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289
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 70A TO220-3 OptiMOS-T | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 70 A | 12 mOhms | OptiMOS | ||||||||||
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312
In-stock
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IR / Infineon | MOSFET MOSFT 55V 86A 8mOhm 40nC Log Lvl | 16 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 40 nC | |||||||||
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29
In-stock
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IXYS | MOSFET -170.0 Amps -100V 0.012 Rds | 20 V | Through Hole | PLUS-247-3 | + 150 C | Tube | Si | P-Channel | - 100 V | - 170 A | 12 mOhms | ||||||||||
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540
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | 16 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 40 nC | Enhancement | |||||||
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85
In-stock
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IXYS | MOSFET 70 Amps 75V 0.0120 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 70 A | 12 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 70 Amps 75V 0.0120 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 70 A | 12 mOhms | Enhancement | |||||||
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880
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 57 A | 12 mOhms | PowerTrench | |||||||
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VIEW | Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 60 V | 57 A | 12 mOhms | 43 nC | Enhancement | |||||||
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VIEW | IXYS | MOSFET 100 Amps 100V 0.012 Ohm Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 12 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 150 Amps 100V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 150 A | 12 mOhms | HyperFET | ||||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | 16 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 40 nC | Enhancement | |||||||
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VIEW | IXYS | MOSFET 70V 76A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 70 V | 76 A | 12 mOhms | Enhancement | HyperFET | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 12 mOhms | 44 nC | Enhancement |