- Manufacture :
- Mounting Style :
- Package / Case :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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137,500
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 86A 8mOhm 40nC Log LvlAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 40 nC | |||||||
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312
In-stock
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IR / Infineon | MOSFET MOSFT 55V 86A 8mOhm 40nC Log Lvl | 16 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 40 nC | |||||||
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540
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | 16 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 40 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | 16 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 40 nC | Enhancement | |||||
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566
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 8mOhms 40nC | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 1 V to 3 V | 40 nC | Enhancement |
