- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
39 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,068
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 8mOhms 44nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 12 mOhms | 3 V | 44 nC | Enhancement | ||||
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7,603
In-stock
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IR / Infineon | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 12 mOhms | 2.5 V | 34 nC | |||||
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2,460
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 52 A | 12 mOhms | Enhancement | PowerTrench | |||||
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4,887
In-stock
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Fairchild Semiconductor | MOSFET 100V/20V N-Chnl Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 12 mOhms | 2 V | 42 nC | Enhancement | PowerTrench | |||
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2,469
In-stock
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Infineon Technologies | MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 55 A | 12 mOhms | 4 V | 22 nC | Enhancement | Directfet | |||
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4,074
In-stock
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IR / Infineon | MOSFET MOSFT 60V 83A 12mOhm 86.6nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 84 A | 12 mOhms | 4 V | 130 nC | |||||
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90
In-stock
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STMicroelectronics | MOSFET POWER MOSFET N-CH 200V | SMD/SMT | ISOTOP-4 | Tube | Si | N-Channel | 200 V | 140 A | 12 mOhms | |||||||||||
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2,275
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | - 20 V, + 30 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 10.8 A | 12 mOhms | Enhancement | PowerTrench | |||||
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1,364
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 46 A | 12 mOhms | Enhancement | PowerTrench | |||||
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1,984
In-stock
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onsemi | MOSFET Pwr MOSFET 60V 61A 12mOhm SGL N-CH | SMD/SMT | SO-FL-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 61 A | 12 mOhms | ||||||||||
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2,811
In-stock
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onsemi | MOSFET SWITCHING DEVICE | SMD/SMT | ATPAK-3 | Reel | Si | N-Channel | 30 V | 50 A | 12 mOhms | |||||||||||
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2,431
In-stock
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Diodes Incorporated | MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 70A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 70 A | 12 mOhms | 1 V | 41.3 nC | Enhancement | ||||
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169
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 15mOhms 71nC | 30 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 83 A | 12 mOhms | 71 nC | ||||||||
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106
In-stock
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IR / Infineon | MOSFET MOSFT 100V 96A 10mOhm 120nC Qg | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 85 A | 12 mOhms | 5 V | 110 nC | |||||
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2,214
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 36A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 34 V | 36 A | 12 mOhms | 6.1 nC | OptiMOS | |||||
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698
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 70 A | 12 mOhms | 60 nC | OptiMOS | |||||
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2,402
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 37 A | 12 mOhms | 1 V | 17 nC | Enhancement | ||||
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2,159
In-stock
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onsemi | MOSFET NFET SO8 30V 11.4A 9MOHM | SMD/SMT | SOIC-8 | Reel | Si | N-Channel | 30 V | 11.6 A | 12 mOhms | 2.5 V | 15 nC | |||||||||
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578
In-stock
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Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 57 A | 12 mOhms | 4 V | 43 nC | |||||
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406
In-stock
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Diodes Incorporated | MOSFET 40 N-Ch Enh FET 31V to 99V 1810pF | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 11.5 A | 12 mOhms | 1 V to 3 V | 17 nC | Enhancement | ||||
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3,374
In-stock
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Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 60 A | 12 mOhms | 1.9 V | 3.9 nC | Enhancement | NexFET | |||
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5,000
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 10 A | 12 mOhms | 800 mV | 8.7 nC | Enhancement | ||||
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1,500
In-stock
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onsemi | MOSFET SO8FL 60V | SMD/SMT | SO-FL-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 61 A | 12 mOhms | ||||||||||
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VIEW | IXYS | MOSFET 70 Amps 75V 0.0120 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 70 A | 12 mOhms | Enhancement | ||||||
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VIEW | onsemi | MOSFET SO8FL 60V | SMD/SMT | SO-FL-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 61 A | 12 mOhms | ||||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 60 V | 57 A | 12 mOhms | 43 nC | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9 A | 12 mOhms | - 1 V | 24 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET 55V, 61A, 14 mOhm Auto Lgc Lvl MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 61 A | 12 mOhms | 61 nC | ||||||||
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VIEW | onsemi | MOSFET TRENCH 3.1 30V 7 Ohm NCH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 44 A | 12 mOhms | 1.6 V | 8.7 nC | |||||
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VIEW | STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 12 mOhms | - 2.5 V | 24 nC | Enhancement |
