- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
25 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,068
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 8mOhms 44nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 12 mOhms | 3 V | 44 nC | Enhancement | ||||
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7,603
In-stock
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IR / Infineon | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 12 mOhms | 2.5 V | 34 nC | |||||
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2,460
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 52 A | 12 mOhms | Enhancement | PowerTrench | |||||
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4,074
In-stock
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IR / Infineon | MOSFET MOSFT 60V 83A 12mOhm 86.6nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 84 A | 12 mOhms | 4 V | 130 nC | |||||
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2,275
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | - 20 V, + 30 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 10.8 A | 12 mOhms | Enhancement | PowerTrench | |||||
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1,364
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 46 A | 12 mOhms | Enhancement | PowerTrench | |||||
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1,407
In-stock
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Fairchild Semiconductor | MOSFET 75a 55V 0.012Ohm NCh UltraFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 75 A | 12 mOhms | Enhancement | UltraFET | |||||
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884
In-stock
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Fairchild Semiconductor | MOSFET N Chan 100V 12Mohm | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 74 A | 12 mOhms | Enhancement | PowerTrench | |||||
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211
In-stock
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IXYS | MOSFET 175V 150A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 175 V | 150 A | 12 mOhms | 2.5 V to 4.5 V | 63 nC | Enhancement | ||||
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2,431
In-stock
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Diodes Incorporated | MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 70A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 70 A | 12 mOhms | 1 V | 41.3 nC | Enhancement | ||||
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897
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 72A 12mOhm 73.3nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 72 A | 12 mOhms | 4 V | 73.3 nC | |||||
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106
In-stock
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IR / Infineon | MOSFET MOSFT 100V 96A 10mOhm 120nC Qg | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 85 A | 12 mOhms | 5 V | 110 nC | |||||
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698
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 70 A | 12 mOhms | 60 nC | OptiMOS | |||||
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2,402
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 37 A | 12 mOhms | 1 V | 17 nC | Enhancement | ||||
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578
In-stock
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Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 57 A | 12 mOhms | 4 V | 43 nC | |||||
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85
In-stock
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IXYS | MOSFET 70 Amps 75V 0.0120 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 70 A | 12 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 70 Amps 75V 0.0120 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 70 A | 12 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET 55V, 61A, 14 mOhm Auto Lgc Lvl MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 61 A | 12 mOhms | 61 nC | ||||||||
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VIEW | STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 12 mOhms | - 2.5 V | 24 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 70V 76A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 70 V | 76 A | 12 mOhms | Enhancement | HyperFET | |||||
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VIEW | IR / Infineon | MOSFET 55V, 61A, 14 mOhm Auto Lgc Lvl MOSFET | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 61 A | 12 mOhms | 1 V to 3 V | 61 nC | Enhancement | ||||
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566
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 8mOhms 40nC | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 1 V to 3 V | 40 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET 55V, 61A, 14 mOhm Auto Lgc Lvl MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 61 A | 12 mOhms | 61 nC | ||||||||
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VIEW | IR / Infineon | MOSFET 55V, 61A, 14 mOhm Auto Lgc Lvl MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 61 A | 12 mOhms | 61 nC | ||||||||
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VIEW | IR / Infineon | MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 44 A | 12 mOhms | Enhancement |
