- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4,887
In-stock
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Fairchild Semiconductor | MOSFET 100V/20V N-Chnl Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 12 mOhms | 2 V | 42 nC | Enhancement | PowerTrench | |||
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420
In-stock
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IXYS | MOSFET -170.0 Amps -100V 0.012 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 170 A | 12 mOhms | |||||||
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2,469
In-stock
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Infineon Technologies | MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 55 A | 12 mOhms | 4 V | 22 nC | Enhancement | Directfet | |||
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GET PRICE |
12,870
In-stock
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onsemi | MOSFET 100V N-Channel PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 57 A | 12 mOhms | Enhancement | PowerTrench | ||||
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2,214
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 36A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 34 V | 36 A | 12 mOhms | 6.1 nC | OptiMOS | |||||
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29
In-stock
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IXYS | MOSFET -170.0 Amps -100V 0.012 Rds | 20 V | Through Hole | PLUS-247-3 | + 150 C | Tube | Si | P-Channel | - 100 V | - 170 A | 12 mOhms | |||||||||
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406
In-stock
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Diodes Incorporated | MOSFET 40 N-Ch Enh FET 31V to 99V 1810pF | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 11.5 A | 12 mOhms | 1 V to 3 V | 17 nC | Enhancement | ||||
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3,374
In-stock
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Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 60 A | 12 mOhms | 1.9 V | 3.9 nC | Enhancement | NexFET | |||
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5,000
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 10 A | 12 mOhms | 800 mV | 8.7 nC | Enhancement | ||||
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880
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 57 A | 12 mOhms | PowerTrench | ||||||
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VIEW | STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9 A | 12 mOhms | - 1 V | 24 nC | Enhancement | ||||
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VIEW | onsemi | MOSFET TRENCH 3.1 30V 7 Ohm NCH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 44 A | 12 mOhms | 1.6 V | 8.7 nC | |||||
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VIEW | IXYS | MOSFET 100 Amps 100V 0.012 Ohm Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 12 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 180 Amps 200V 0.01 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 158 A | 12 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 150 Amps 100V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 150 A | 12 mOhms | Enhancement |
