- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
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24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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526
In-stock
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IXYS | MOSFET -140 Amps -50V 0.008 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 140 A | 9 mOhms | - 4 V | 200 nC | Enhancement | TrenchP | |||
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671
In-stock
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IXYS | MOSFET 170 Amps 100V 0.009 Ohm Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | Enhancement | ||||||
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2,615
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 2.2mOhms 43nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 9 mOhms | 62 nC | Enhancement | |||||
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8,520
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 9 mOhms | Enhancement | ||||||
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2,331
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -45A TO220-3 OptiMOS-P2 | + 5 V, - 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 45 A | 9 mOhms | - 1.5 V | 42 nC | Enhancement | OptiMOS | |||
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786
In-stock
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Fairchild Semiconductor | MOSFET 100V 75A N-Chan PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 9 mOhms | Enhancement | PowerTrench | |||||
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775
In-stock
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Infineon Technologies | MOSFET MOSFT 130A 66.7nC 6.5mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 130 A | 9 mOhms | 66.7 nC | ||||||||
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105
In-stock
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IXYS | MOSFET 133 Amps 100V 0.0075 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 133 A | 9 mOhms | 5 V | 235 nC | Enhancement | Polar, HiPerFET | |||
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82
In-stock
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IXYS | MOSFET PolarHT HiperFET 100v, 170A | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | 5 V | 198 nC | Enhancement | PolarHT, HiPerFET | |||
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118
In-stock
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IXYS | MOSFET Trench T2 HiperFET Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 160 A | 9 mOhms | 4.5 V | 253 nC | Enhancement | TrenchT2, HiperFET | |||
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165
In-stock
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Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 9 mOhms | 180 nC | Enhancement | ||||||
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844
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 59 A | 9 mOhms | 3.7 V | 83 nC | Enhancement | StrongIRFET | |||||
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15
In-stock
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IXYS | MOSFET 220Amps 150V | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 220 A | 9 mOhms | 4.5 V | 162 nC | Enhancement | Polar, HiPerFET | |||
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3
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 120A 6mOhm 93.3nC LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 120 A | 9 mOhms | 93.3 nC | ||||||||
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546
In-stock
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Texas instruments | MOSFET 60V N-Chnl NxFT Pwr MSFT .. | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 9 mOhms | 1.9 V | 28 nC | NexFET | ||||
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15,591
In-stock
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Fairchild Semiconductor | MOSFET N-Ch PowerTrench Logic Level | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 60 A | 9 mOhms | Enhancement | PowerTrench | |||||
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823
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 50 A | 9 mOhms | 4 V | 36 nC | Enhancement | OptiMOS | |||
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90
In-stock
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IXYS | MOSFET -140 Amps -50V 0.008 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 140 A | 9 mOhms | - 4 V | 200 nC | Enhancement | TrenchP | |||
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30
In-stock
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IXYS | MOSFET 170 Amps 100V 0.009 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | 5 V | 198 nC | Enhancement | PolarHT, HiPerFET | |||
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VIEW | Infineon Technologies | MOSFET 100V SINGLE N-CH 9mOhms 260nC | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 141 A | 9 mOhms | 260 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 170 Amps 100V 0.009 Ohm Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | Enhancement | ||||||
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GET PRICE |
8,622
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 97A 9mOhm 83nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 97 A | 9 mOhms | 83 nC | |||||||
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VIEW | IXYS | MOSFET 180 Amps 150V 0.01 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 180 A | 9 mOhms | Enhancement | ||||||
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670
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 40 A | 9 mOhms | Enhancement | OptiMOS |
