- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Qg - Gate Charge :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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547
In-stock
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IR / Infineon | MOSFET MOSFT 30V 140A 6mOhm 93.3nC Log Lvl | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 140 A | 9 mOhms | 1 V | 140 nC | |||||
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1,620
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2K | 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.5 A | 9 mOhms | 1 V | 45.7 nC | Enhancement | DIOFET | |||
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2,472
In-stock
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Diodes Incorporated | MOSFET DIOFET MOSFETN-CHAN ENH MDE SCHOT DIO... | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.4 A | 9 mOhms | 1 V | 45.7 nC | Enhancement | ||||
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3,903
In-stock
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Diodes Incorporated | MOSFET DIOFET MOSFETN-CHAN ENH MDE SCHOT DIO... | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.8 A | 9 mOhms | 1 V | 43 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgs Low Rdson | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 9 mOhms | 1 V | 42 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgs Low Rdson | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 9 mOhms | 1 V | 42 nC | Enhancement | ||||
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38
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 6.5mOhms 66.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 110 A | 9 mOhms | 1 V | 66.7 nC | Enhancement | ||||
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29
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET PWR MOSFET 6.5mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 130 A | 9 mOhms | 1 V | 100 nC | Enhancement |