- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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879
In-stock
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Fairchild Semiconductor | MOSFET TO-220 N-CH ENHANCE | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 75 A | 13 mOhms | Enhancement | ||||||
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1,064
In-stock
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IXYS | MOSFET -96 Amps -85V 0.013 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 85 V | - 96 A | 13 mOhms | Enhancement | ||||||
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852
In-stock
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Fairchild Semiconductor | MOSFET 75V 58a 0.016 Ohms/VGS=10V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 58 A | 13 mOhms | Enhancement | PowerTrench | |||||
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1,708
In-stock
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Infineon Technologies | MOSFET DUAL -30V P-CH HEXFET 16.3mOhms | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | P-Channel | - 30 V | - 9.2 A | 13 mOhms | 19 nC | ||||||||
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255
In-stock
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IXYS | MOSFET -96 Amps -85V 0.013 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 85 V | - 96 A | 13 mOhms | - 2 V to - 4 V | 180 nC | Enhancement | ||||
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246
In-stock
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IXYS | MOSFET 170 Amps 150V 0.013 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 5 V | 190 nC | Enhancement | PolarHT, HiPerFET | |||
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1,282
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 8.7mOhms 8.1nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 14 A | 13 mOhms | 2.35 V | 8.1 nC | |||||
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8,950
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 82A 13mOhm 106.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 82 A | 13 mOhms | 106.7 nC | ||||||||
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261
In-stock
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IXYS | MOSFET -96 Amps -85V 0.013 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 85 V | - 96 A | 13 mOhms | - 2 V | 180 nC | Enhancement | ||||
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558
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 13mOhms 106.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 82 A | 13 mOhms | 106.7 nC | Enhancement | |||||
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302
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 19A TO220-5 | 20 V | Through Hole | TO-220-5 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 19 A | 13 mOhms | 1.6 V | 85 nC | Enhancement | ||||
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52
In-stock
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IXYS | MOSFET 110 Amps 150V | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 4.5 V | 150 nC | Enhancement | ||||
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339
In-stock
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IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 13mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 75 A | 13 mOhms | 106.7 nC | Enhancement | ||||||
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24
In-stock
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IXYS | MOSFET -108.0 Amps -100V 0.013 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 108 A | 13 mOhms | - 4 V | 240 nC | Enhancement | PolarP | ||||
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99
In-stock
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IXYS | MOSFET 150 Amps 150V 0.013 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 5 V | 190 nC | Enhancement | PolarHT | |||
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46
In-stock
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IXYS | MOSFET 150 Amps 150V 0.013 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 5 V | 190 nC | Enhancement | PolarHT | |||
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30
In-stock
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IXYS | MOSFET 94 Amps 150V 0.011 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 100 A | 13 mOhms | 5 V | 240 nC | Enhancement | PolarHV, ISOPLUS247, HiPerFET | |||
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VIEW | IXYS | MOSFET SMPD MOSFETs Power Device | SMD/SMT | SMPD-24 | Tube | Si | N-Channel | 250 V | 130 A | 13 mOhms | |||||||||||
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VIEW | IXYS | MOSFET 160 Amps 200V 0.013 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 160 A | 13 mOhms | Enhancement | ||||||
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1,617
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 52nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 12.5 A | 13 mOhms | 1 V | 52 nC | Enhancement | ||||
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669
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 10mOhms 9.5nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13 A | 13 mOhms | 9.5 nC | Enhancement | |||||
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3
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 13mOhms 62nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 71 A | 13 mOhms | 62 nC | Enhancement | |||||
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6
In-stock
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IR / Infineon | MOSFET 30V DUAL N-CH HEXFET 30V VGS MAX | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | N-Channel | 30 V | 11 A | 13 mOhms | 14 nC |
