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3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,708
In-stock
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Infineon Technologies | MOSFET DUAL -30V P-CH HEXFET 16.3mOhms | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | P-Channel | - 30 V | - 9.2 A | 13 mOhms | 19 nC | ||||||||
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12,000
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -9.2A 16.3mOhm -4.5V capbl | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 9.2 A | 13 mOhms | 19 nC | ||||||||
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3,786
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 42W 1230pF 36A 100V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 36 A | 13 mOhms | 4 V | 19 nC | Enhancement |