- Manufacture :
- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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10,702
In-stock
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onsemi | MOSFET Single N-CH 60V 40A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 13 mOhms | 1 V to 2 V | 29 nC | ||||
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558
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 13mOhms 106.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 82 A | 13 mOhms | 106.7 nC | Enhancement | ||||
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490
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 13mOhms 106.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 82 A | 13 mOhms | 4 V | 160 nC | Enhancement | |||
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85
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 82A 13mOhm 106.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 82 A | 13 mOhms | 106.7 nC | |||||||
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2,500
In-stock
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onsemi | MOSFET NFET DPAK 30V 40A 13MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 13 mOhms | Enhancement | |||||
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3
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 13mOhms 62nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 71 A | 13 mOhms | 62 nC | Enhancement |
