- Manufacture :
- Package / Case :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,015
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode FET 12Vgss 1.05W | 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 18.1 A | 8.7 mOhms | 0.7 V | 68.8 nC | Enhancement | |||
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1,960
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh FET 6495pF 66.8nC | 4.5 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 24.1 A | 8.7 mOhms | 0.7 V | 68.8 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET N-Ch 20V FET 27A 30W 1879pF 26nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 27 A | 8.7 mOhms | 26 nC |
