- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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695
In-stock
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Fairchild Semiconductor | MOSFET 40V N-CH PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 12 A | 8.7 mOhms | Enhancement | PowerTrench | |||||
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1,015
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode FET 12Vgss 1.05W | 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 18.1 A | 8.7 mOhms | 0.7 V | 68.8 nC | Enhancement | ||||
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1,960
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh FET 6495pF 66.8nC | 4.5 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 24.1 A | 8.7 mOhms | 0.7 V | 68.8 nC | Enhancement | ||||
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48,990
In-stock
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Texas instruments | MOSFET CSD17579Q3A 30 V 8-VSONP | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 8.7 mOhms | 1.1 V | 15 nC | Enhancement | NexFET | |||
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5,000
In-stock
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Texas instruments | MOSFET 100V 7.8mOhm N-CH Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 8.7 mOhms | 2.8 V | 27 nC | Enhancement | NexFET | |||
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1,104
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 6.8mOhms 18nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 16 A | 8.7 mOhms | 18 nC | Enhancement | |||||
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104
In-stock
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IR / Infineon | MOSFET MOSFT 30V 14A 8.7mOhm 8.1nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 8.7 mOhms | 8.3 nC | Enhancement | StrongIRFET |
