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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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243
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 1.4mOhms 120nC | 20 V | SMD/SMT | TO-263-7 | Tube | 1 Channel | Si | N-Channel | 40 V | 380 A | 1.7 mOhms | 120 nC | ||||||||
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172
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 1.7mOhms | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 350 A | 1.7 mOhms | 220 nC | |||||||||
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94
In-stock
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IXYS | MOSFET 40V/340A TrenchT4 Power MOSFET | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 340 A | 1.7 mOhms | 2 V | 256 nC | Enhancement | TrenchT4 | |||
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100
In-stock
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IXYS | MOSFET 40V/340A TrenchT4 Power MOSFET | 15 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 340 A | 1.7 mOhms | 2 V | 256 nC | Enhancement | TrenchT4 | |||
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VIEW | Infineon Technologies | MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET | 20 V | SMD/SMT | TO-263-7 | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 380 A | 1.7 mOhms | 120 nC | |||||||
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423
In-stock
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STMicroelectronics | MOSFET N-CH 40V 120A STripFET VI DeepGATE | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.7 mOhms | 4.5 V | 377 nC |
