- Vgs - Gate-Source Voltage :
- Mounting Style :
- Qg - Gate Charge :
- Tradename :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
2,973
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripF... | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 1.7 mOhms | 2.5 V | 193 nC | Enhancement | |||
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1,837
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 300 A | 1.7 mOhms | 2 V | 207 nC | Enhancement | OptiMOS | |||
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1,320
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 300 A | 1.7 mOhms | 2 V | 207 nC | Enhancement | OptiMOS | |||
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633
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 1.7 mOhms | 2.2 V | 210 nC | Enhancement | ||||
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GET PRICE |
3,232
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripF... | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 1.7 mOhms | 2.5 V | 193 nC | Enhancement | |||
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2,906
In-stock
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Infineon Technologies | MOSFET 60V N-Ch 139A 2.15 mOhm 147nC | 20 V | SMD/SMT | DirectFET-L6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 148 A | 1.7 mOhms | 2.9 V | 146 nC | Directfet | ||||
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4,800
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 1.7 mOhms | 2.2 V | 210 nC | Enhancement | ||||
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500
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 40 V, 1.3 mOhm typ., 180 A STripF... | 20 V | SMD/SMT | H2PAK-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.7 mOhms | 2 V | 115 nC | Enhancement | ||||
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GET PRICE |
9,390
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.7 mOhms | 3 V | 91 nC | Enhancement | OptiMOS | ||
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94
In-stock
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IXYS | MOSFET 40V/340A TrenchT4 Power MOSFET | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 340 A | 1.7 mOhms | 2 V | 256 nC | Enhancement | TrenchT4 | |||
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100
In-stock
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IXYS | MOSFET 40V/340A TrenchT4 Power MOSFET | 15 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 340 A | 1.7 mOhms | 2 V | 256 nC | Enhancement | TrenchT4 | |||
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4,096
In-stock
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Toshiba | MOSFET POWER MOSFET TRANSISTOR PD=170W | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 45 V | 150 A | 1.7 mOhms | 1.4 V | 99 nC | Enhancement | ||||
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7,984
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 300A HSOF-8 | 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 300 A | 1.7 mOhms | 2.2 V | 178 nC | Enhancement | ||||
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2,500
In-stock
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onsemi | MOSFET T6 40V SL IN DPAK | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 163 A | 1.7 mOhms | 2 V | 80.6 nC | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET Automotive-grade N-channel 40 V, 1.3 mOhm typ., 180 A STripF... | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.7 mOhms | 2 V | 115 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET | 20 V | SMD/SMT | TO-263-7 | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 380 A | 1.7 mOhms | 120 nC | |||||||
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VIEW | Infineon Technologies | MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 343 A | 1.7 mOhms | |||||||||
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423
In-stock
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STMicroelectronics | MOSFET N-CH 40V 120A STripFET VI DeepGATE | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.7 mOhms | 4.5 V | 377 nC | |||||
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VIEW | IR / Infineon | MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 343 A | 1.7 mOhms |
